si1902dl features ? trenchfet ? power mosfets: 2.5 v rated product summary v ds (v) r ds(on) ( )i d (a) 20 0.385 at v gs = 4.5 v 0.70 0.630 at v gs = 2.5 v 0.54 m arking c od e p a x x x lo t t y y y sot-363 sc-70 (6-leads) 6 4 1 2 3 5 to p v iew s 1 g 1 d 2 d 1 g 2 s 2 yy part # code marking code pa lot traceability and date code ordering information: si1902dl-t1 (with tape and reel) SI1902DL-T1-E3 (lead (pb)-free with tape and reel) notes a. surface mounted on 1" x 1" fr4 board. * pb containing terminations are not rohs compliant, exemptions may apply absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) a t a = 25 c i d 0.70 0.66 a t a = 85 c 0.50 0.48 pulsed drain current i dm 1.0 continuous source current (diode conduction) a i s 0.25 0.23 maximum power dissipation a t a = 25 c p d 0.30 0.27 w t a = 85 c 0.16 0.14 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 5 sec r thja 360 415 c/w steady state 400 460 maximum junction-to-foot (drain) steady state r thjf 300 350 available pb-free rohs* compliant product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a v ds = 16 v gs = 0 v, t j = 85c 5 on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 1.0 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 0.66 a 0.320 0.385 v gs = 2.5 v, i d = 0.40 a 0.560 0.630 forward transconductance a g fs v ds = 10 v, i d = 0.66 a 1.5 s diode forward voltage a v sd i s = 0.23 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g v ds = 10 v, v gs = 4.5 v, i d = 0.66 a 0.8 1.2 nc gate-source charge q gs 0.06 gate-drain charge q gd 0.30 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 20 i d ? 0.5 a, v gen = 4.5 v, r g = 6 10 20 ns rise time t r 16 30 turn-off delaytime t d(off) 10 20 fall time t f 10 20 source-drain reverse recovery time t rr i f = 0.23 a, di/dt = 100 a/s 20 40 si1902dl product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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